Памет SSD 8TB
Samsung 9100 Pro
Breakthrough PCIe 5.0 performance
Push PCIe 5.0 performance to the max. 9100 PRO achieves lightning-fast sequential read/write speeds up to 14,800/ 13,400 MB/s, two times faster than 990 PRO*. Leave Gen4 limits behind with random read/write speeds up to 2,200K/ 2,600K IOPS, made possible by Gen5.
Every task, powerfully parallel
Speed past productivity limits. Exhilarating random read/ write speeds enable ultra-fast parallel processing for countless fragmented data, at up to 2,200K/2,600K IOPS. Experience superior output and instant loads for huge games, high-performance tasks, and even AI applications.
Create with AI
Intelligence redefines performance. Defy your limits in work and play with an on-board AI PC and AI content generation, fuelled by 9100 PRO’s exhilarating random read/write speeds up to 2,200K/ 2,600K IOPS*. Swift loads, smooth gameplay, seamless performance.
Exceptional experience
Elevate your competitive edge. Breeze through video editing, 3D art, and streaming sessions with the latest PCIe® 5.0 interfaces. Experience cutting-edge performance anytime, anywhere, on compatible devices, and choose the storage you need with expansive capacity up to 8TB*.
Extraordinary thermal efficiency
Consistent peak performance. The advanced 5nm controller power architecture enhances power efficiency up to 49% over 990 PRO*. Exceptional thermal control minimises disruption, so you can keep the most demanding programs running with the max possible power of PCIe 5.0.
General Feature
| FORM FACTOR M.2 (2280) | Да |
| INTERFACE PCIe® | 5.0 x4, NVMe™ 2.0 |
| DIMENSION (WxHxD) 8TB | 80.15 x 22.15 x 3.88 mm |
| WEIGHT 8TB | Max 9.5g Weight |
| STORAGE MEMORY Samsung V-NAND TLC | Да |
| CONTROLLER Samsung in-house Controller | Да |
| CACHE MEMORY Samsung | 8GB Low Power DDR4X SDRAM (8TB) |
Special Feature
| TRIM Support Supported | Да |
| S.M.A.R.T Support Supported | Да |
| GC (GARBAGE COLLECTION) Auto Garbage Collection Algorithm | Да |
| DEVICE SLEEP MODE SUPPORT | Да |
Performance2)
| SEQUENTIAL READ 8TB | Up to 14,800 MB/s (TBD) |
| SEQUENTIAL WRITE 8TB | Up to 13,400 MB/s (TBD) |
| RANDOM READ (4KB, QD32) 8TB | Up to 2,200,000 IOPS (TBD) |
| RANDOM WRITE (4KB, QD32) 8TB | Up to 2,600,000 IOPS (TBD) |
Работна среда
| ALLOWABLE VOLTAGE | 3.3 V ± 5 % Allowable voltage |
| RELIABILITY (MTBF) | 1.5 Million Hours Reliability (MTBF) |
| Работна температура | 0 - 70 ℃ Operating Temperature |
| Shock | 1,500 G & 0.5 ms (Half sine) |