Памет SSD 4TB
Samsung 990 Evo Plus
Power efficiencyPower efficiency enhanced by 73% for more MB/s per watt,while maintaining performance and thermal control.
Cool power through your day
Optimised efficiency, extended performance. The nickel-coated controller helps increase MB/s per Watt by 73%, achieving the same power level and thermal control with less power consumption. Stay focused on work or play with no overheating or battery life worries.
Extra space. Extra speed.
Harness the full power of your drive with enhanced Intelligent TurboWrite 2.0. Process massive data fast and breeze through heavy graphics with an enlarged TurboWrite region, now available in 4TB capacity.
Bringing innovations to lifeFor decades, Samsung’s NAND flash memory has powered groundbreaking technologies that have changed every part of our daily lives. This NAND flash technology also powers our consumer SSDs, making room for the next big push of innovation.
Характеристики
| Application Client PCs | Да |
| Form Factor M.2 (2280) | Да |
| Interface PCIe 4.0 | x4 / 5.0 x2 NVMe 2.0 |
| Dimension (WxHxD) Max | 80.15 x Max 22.15 x Max 2.38 mm |
| Weight Max | 9.0g Weight |
| Storage Memory Samsung V-NAND TLC | Да |
| Controller Samsung in-house Controller | Да |
| Cache Memory HMB(Host Memory Buffer) | Да |
| Special Feature | Да |
| TRIM Support Supported | Да |
| S.M.A.R.T Support Supported | Да |
| GC (Garbage Collection) Auto Garbage Collection Algorithm | Да |
| WWN Support Not supported | Да |
| Device Sleep Mode Support | Да |
| Performance | Да |
| Environment | Да |
| Average Power Consumption (system level) Average | Read 5.5 W / Write 4.8 W* Actual power consumption may vary depending on system hardware & configuration |
| Allowable Voltage | 3.3 V ± 5 % Allowable voltage |
| Reliability (MTBF) | 1.5 Million Hours Reliability (MTBF) |
| Работна температура | 0 - 70 ℃ Operating Temperature |
| Shock | 1,500 G & 0.5 ms (Half sine) |